Publications
1. Correlation between phase transition characteristics and hydrogen irradiation-induced Frenkel defect formations in FeRh films S Song, C Cho, J Kim, J Lee, D Lee, D Kim, H Kim, H Kang, CH Park, ..., Journal of Alloys and Compounds, 163611 2022
2. Octahedral Symmetry Modification Induced Orbital Occupancy Variation in VO 2
D Lee, T Min, J Kim, S Song, J Lee, H Kang, J Lee, DY Cho, J Lee, ,The Journal of Physical Chemistry Letters 13, 75-82 2021
3. Nanostructure and local polymorphism in “ideal-like” rare-earths-based high-entropy alloys
A Jelen, JH Jang, J Oh, HJ Kim, A Meden, S Vrtnik, M Feuerbacher, ...Materials Characterization 172, 110837 2021
4. In Situ Observation of Two-Dimensional Electron Gas Creation at the Interface of an Atomic Layer-Deposited Al 2 O 3 /TiO 2 Thin-Film Heterostructure
TJ Seok, Y Liu, JH Choi, HJ Kim, DH Kim, SM Kim, JH Jang, DY Cho, ...Chemistry of Materials 92020
5. Data Mining of Heterogeneous Electrical Conduction in the Electrode Components of Fuel Cells
D Seol, S Jung, B Kim, YT Kim, MH Yi, H Lee, J Oh, JH Jang, Y Kim, ACS Applied Materials & Interfaces 12 (20), 23576-23583 2020
6. Resolving Dirac electrons with broadband high-resolution NMR
W Papawassiliou, A Jaworski, AJ Pell, JH Jang, Y Kim, SC Lee, HJ Kim, ...Nature communications 11 (1), 1-72020
7. In situ work-function measurement during chemical transformation of MoS2 to MoO3 by ambient-pressure x-ray photoelectron spectroscopy
D Lee, JH Jang, W Song, J Moon, Y Kim, J Lee, B Jeong, S Park, 2D Materials 7 (2), 025014 2020
8. Multiscale probing of the influence of the defect-induced variation of oxygen vacancies on the photocatalytic activity of doped ZnO nanoparticles
YH Kim, S Kim, K Kim, C Kim, JH Jang, YM Kim, H Lee, Journal of Materials Chemistry A 8 (47), 25345-253542020
9. Degradation Mechanism of Vanadium Oxide Films When Grown on Y‐Stabilized ZrO 2 Above 500°C
S Choi, J Oh, JH Lee, JH Jang, S Lee, Advanced Engineering Materials 21 (12), 1900918 2019
10. Indium-free amorphous Ca–Al–O thin film as a transparent conducting oxide
SH Sim, KT Kang, S Lee, M Lee, H Taniguchi, S Kim, S Roh, JH Oh, ...Chemistry of Materials 31 (19), 8019-8025 2019
11. Mechanistic Insight into Surface Defect Control in Perovskite Nanocrystals: Ligands Terminate the Valence Transition from Pb 2+ to Metallic Pb 0
A Kirakosyan, ND Chinh, MR Sihn, MG Jeon, JR Jeong, D Kim, JH Jang, ...The journal of physical chemistry letters 10 (15), 4222-4228 2019
12.Diverse Structural Conversion and Aggregation Pathways of Alzheimerʼs Amyloid‑β (1−40)
ACS Nano 13, 8766 2019
13. Sharp contrast in the electrical and optical properties of vanadium Wadsley epitaxial films selectively stabilized on (111)-oriented Y-stabilized
S Choi, J Son, J Oh, JH Lee, JH Jang, S Lee Physical Review Materials 3 (6), 063401 2019
14. Extremely Light Carrier‐Effective Mass in a Distorted Simple Metal Oxide
G Kim, YQ Zhang, T Min, H Suh, JH Jang, H Kong, J Lee, J Lee, TY Jeon, ...Advanced Electronic Materials 5 (2), 18005042019
15. Material structure, properties, and dynamics through scanning transmission electron microscopy
SJ Pennycook, C Li, M Li, C Tang, E Okunishi, M Varela, YM Kim, JH Jang, Journal of Analytical Science and Technology 9 (1), 112018
16. Field-Effect Device Using Quasi-Two-Dimensional Electron Gas in Mass-Producible Atomic-Layer-Deposited Al 2 O 3 /TiO 2 Ultrathin (<10 nm) Film Heterostructures
TJ Seok, Y Liu, HJ Jung, SB Kim, DH Kim, SM Kim, JH Jang, DY Cho, ...ACS nano 12 (10), 10403-104092018
17. Electrical and Optical Properties of VO 2 Polymorphic Films Grown Epitaxially on Y‐Stabilized ZrO 2
S Choi, SJ Chang, J Oh, JH Jang, S Lee Advanced Electronic Materials 4 (6), 1700620 2018
18. Kinetically Controlled Growth of Phase‐Pure SnS Absorbers for Thin Film Solar Cells: Achieving Efficiency Near 3% with Long‐Term Stability Using an SnS/CdS Heterojunction
D Lim, H Suh, M Suryawanshi, GY Song, JY Cho, JH Kim, JH Jang, ... Advanced Energy Materials 8 (10), 1702605 2018
19. Four‐Bits‐Per‐Cell Operation in an HfO 2 ‐Based Resistive Switching Device
GH Kim, H Ju, MK Yang, DK Lee, JW Choi, JH Jang, SG Lee, IS Cha, ...Small 13 (40), 17017812017
20 In-Situ Observation of Oxygen Vacancy Dynamics and Ordering in the Epitaxial LaCoO3 System
JH Jang, YM Kim, Q He, R Mishra, L Qiao, MD Biegalski, AR Lupini, ...ACS nano 11, 69422017
21. Selective control of oxygen sublattice stability by epitaxial strain in Ruddlesden-Popper films
TL Meyer, L Jiang, J Lee, M Yoon, JW Freeland, JH Jang, DS Aidhy, ...arXiv preprint arXiv:1508.069712015
22. Phase Transformations and Surface/Interface Properties in Functional Perovskites with Aberration-Corrected STEM/EELS
AYB Jae H Jang, Rohan Mishra, Young-Min Kim, Qian He, Jaekwang Lee, Mina ...Microscopy and Microanalysis 21 (S3), 2429-2430 2015
23. Dimensionality Controlled Octahedral Symmetry-Mismatch and Functionalities in Epitaxial LaCoO 3 /SrTiO 3 Heterostructures
L Qiao, JH Jang, DJ Singh, Z Gai, H Xiao, A Mehta, RK Vasudevan, ...Nano letters 15 (7), 4677-46842015
24. Water-mediated electrochemical nano-writing on thin ceria films
N Yang, S Doria, A Kumar, JH Jang, TM Arruda, A Tebano, S Jesse, ...Nanotechnology 25 (7), 0757012014
25. Local probing of electrochemically induced negative differential resistance in TiO2 memristive materials
Y Kim, JH Jang, SJ Park, S Jesse, L Donovan, AY Borisevich, W Lee, ...Nanotechnology 24 (8), 0857022013
26. Electrical properties of the amorphous interfacial layer between Al electrodes and epitaxial NiO films
J Hyuck Jang, JH Kwon, S Ran Lee, K Char, M Kim Applied Physics Letters 100 (17), 1721012012
27. Role of oxygen vacancies formed between top electrodes and epitaxial NiO films in bipolar resistance switching
SR Lee, HM Kim, K Char, JH Jang, M Kim, MR Cho, YD Park, R Jung, ...Current Applied Physics 12 (2), 369-3722012
28. Properties of atomic layer deposited HfO2 films on Ge substrates depending on process temperatures
HS Jung, HK Kim, IH Yu, SY Lee, J Lee, J Park, JH Jang, SH Jeon, ...Journal of The Electrochemical Society 159 (4), G332012
29. Dependence of optimized annealing temperature for tetragonal phase formation on the Si concentration of atomic-layer-deposited Hf-silicate film
HK Kim, HS Jung, JH Jang, J Park, TJ Park, SH Lee, CS Hwang, Journal of Applied Physics 110 (11), 1141072011
30. Local epitaxial growth of Ru thin films by atomic layer deposition at low temperature
SK Kim, S Han, GH Kim, JH Jang, JH Han, CS Hwang, Journal of the Electrochemical Society 158 (8), D4772011
31. Atomic Layer Deposition of SrTiO3 Thin Films with Highly Enhanced Growth Rate for Ultrahigh Density Capacitors
SW Lee, JH Han, S Han, W Lee, JH Jang, M Seo, SK Kim, C Dussarrat, ...,Chemistry of Materials 23 (8), 2227-2236 2011
32. Improved Growth and Electrical Properties of Atomic-Layer-Deposited Metal-Oxide Film by Discrete Feeding Method of Metal Precursor
TJ Park, JH Kim, JH Jang, UK Kim, SY Lee, J Lee, HS Jung, CS Hwang, Chemistry of Materials 23 (7), 1654-16582011
33. The effects of postdeposition annealing on the crystallization and electrical characteristics of HfO2 and ZrO2 gate dielectrics
HS Jung, JH Jang, DY Cho, SH Jeon, HK Kim, SY Lee, CS Hwang, Electrochemical and Solid State Letters 14 (5), G172011
34. Investigation of oxygen-related defects and the electrical properties of atomic layer deposited HfO2 films using electron energy-loss spectroscopy
JH Jang, HS Jung, JH Kim, SY Lee, CS Hwang, M Kim, Journal of Applied Physics 109 (2), 0237182011
35. Dielectric Science and Materials Atomic-Layer-Deposited Dielectric Thin Films on a Cu Clad Laminate Substrate for Embedded Metal-Insulator-Metal Capacitor Applications in …
TJ Park, JH Kim, JH Jang, CS Hwang, HD Kang, YK Chung, YS Oh, Journal of the Electrochemical Society 158 (1), G1 2011
36. Dielectric Science and Materials-The Effects of Postdeposition Annealing on the Crystallization and Electrical Characteristics of HfO2 and ZrO2 Gate Dielectrics
HS Jung, JH Jang, DY Cho, SH Jeon, HK Kim, SY Lee, CS Hwang, IEEE-ECS Electrochemical and Solid State Letters 14 (5), G17 2011
37. Atomic-Layer-Deposited Dielectric Thin Films on a Cu Clad Laminate Substrate for Embedded Metal–Insulator–Metal Capacitor Applications in Printed Circuit Boards
TJ Park, JH Kim, JH Jang, CS Hwang, HD Kang, YK Chung, YS Oh, Journal of The Electrochemical Society 158 (1), G12010
38. Growth and Phase Separation Behavior in Ge-Doped Sb− Te Thin Films Deposited by Combined Plasma-Enhanced Chemical Vapor and Atomic Layer Depositions
S Choi, BJ Choi, T Eom, JH Jang, W Lee, CS Hwang, The Journal of Physical Chemistry C 114 (41), 17899-179042010
39. Optimized electrical properties and chemical structures of SrTiO3 thin films on Si using various interfacial barrier layers
TJ Park, JH Kim, JH Jang, J Lee, SW Lee, UK Kim, M Seo, HS Jung, ..., Journal of The Electrochemical Society 157 (10), G2162010
40. Reduction of electrical defects in atomic layer deposited HfO2 films by Al doping
TJ Park, JH Kim, JH Jang, CK Lee, KD Na, SY Lee, HS Jung, M Kim, ...,Chemistry of Materials 22 (14), 4175-41842010
41. Atomic structure of conducting nanofilaments in TiO 2 resistive switching memory
DH Kwon, KM Kim, JH Jang, JM Jeon, MH Lee, GH Kim, XS Li, GS Park, ..., Nature nanotechnology 5 (2), 148-1532010
42. Effects of annealing environment on interfacial reactions and electrical properties of ultrathin SrTiO3 on Si
TJ Park, JH Kim, JH Jang, J Lee, SW Lee, SY Lee, HS Jung, CS Hwang, Journal of The Electrochemical Society 156 (9), G1292009
43. Direct observation of conducting paths in TiO2 thin film by transmission electron microscopy
DH Kwon, JM Jeon, JH Jang, KM Kim, CS Hwang, M Kim, Microscopy and Microanalysis 15 (S2), 996-9972009
44. Reduced Electrical Defects and Improved Reliability of Atomic-Layer-Deposited HfO2 Dielectric Films by In Situ NH3 Injection
JH Kim, TJ Park, M Cho, JH Jang, M Seo, KD Na, CS Hwang, JY Won, Journal of the Electrochemical Society 156 (5), G482009
45. Role of Carbon on Resistivity and Structure of HfC x N y Films Grown by Low Temperature MOCVD
JH Jang, TJ Park, JH Kim, KD Na, WY Park, M Kim, CS Hwang, Journal of The Electrochemical Society 156 (1), H762008
46. Dependences of nitrogen incorporation behaviors on the crystallinity and phase distribution of atomic layer deposited Hf-silicate films with various Si concentrations
TJ Park, JH Kim, JH Jang, KD Na, CS Hwang, JH Yoo, Journal of Applied Physics 104 (5), 0541012008
47. Electron energy-loss spectroscopy analysis of HfO2 dielectric films on strained and relaxed SiGe∕ Si substrates
J Jang, TJ Park, JH Kwon, JH Jang, CS Hwang, M Kim, Applied Physics Letters 92 (23), 232906 2008
48. High-frequency micromechanical resonators from aluminium–carbon nanotube nanolaminates
JH Bak, YD Kim, SS Hong, BY Lee, SR Lee, JH Jang, M Kim, K Char, ...Nature materials 7 (6), 459-463 2008
49. Effective work function tunability and interfacial reactions with underlying layer of plasma-enhanced atomic layer deposited films
TJ Park, JH Kim, JH Jang, KD Na, CS Hwang, GM Kim, KJ Choi, JH Jeong, Applied Physics Letters 92 (20), 2029022008
50. Effects of heat dissipation on unipolar resistance switching in Pt∕ NiO∕ Pt capacitors
SH Chang, SC Chae, SB Lee, C Liu, TW Noh, JS Lee, B Kahng, JH Jang, ...Applied Physics Letters 92 (18), 1835072008
51. Effects of surface treatments using O3 and NH3 on electrical properties and chemical structures of high-kHfO2 dielectric films on strained Si1− xGex∕ Si substrates
TJ Park, JH Kim, JH Jang, KD Na, CS Hwang, JY Won, Journal of Applied Physics 103 (8), 0841172008
52. Influence of Phase Separation on Electrical Properties of ALD Hf–Silicate Films with Various Si Concentrations
TJ Park, JH Kim, JH Jang, KD Na, CS Hwang, JH Yoo, Electrochemical and Solid State Letters 11 (5), H1212008
53. Improved electrical performances of plasma-enhanced atomic layer deposited films by adopting plasma
TJ Park, JH Kim, JH Jang, KD Na, CS Hwang, JH Kim, GM Kim, JH Choi, ... Applied Physics Letters 91 (25), 2521062007
54. Comparison of Electrical Properties Between HfO2 Films on Strained and Relaxed Si1− x Ge x Substrates
TJ Park, JH Kim, JH Jang, KD Na, M Seo, CS Hwang, JY Won, Electrochemical and Solid State Letters 10 (12), G97 2007
55. Enhancement in thermal stability of atomic layer deposited HfO2 films by using top Hf metal layer
TJ Park, JH Kim, JH Jang, M Seo, KD Na, CS Hwang, Microelectronic engineering 84 (9-10), 2226-22292007
56. Improvement of thermal stability and composition changes of atomic layer deposited on Si by in situ pretreatment
TJ Park, JH Kim, MH Seo, JH Jang, CS Hwang, Applied physics letters 90 (15), 1529062007
57. The Improvement in Dielectric Characteristics and Reliability of Atomic-Layer-Deposited HfO2 Thin Films by In-Situ NH3 Injection
J Kim, TJ Park, M Cho, M Seo, J Jang, CS Hwang, ECS Transactions 3 (3), 435 2006
58. Magnetoelectric effects of nanoparticulate composite films
H Ryu, P Murugavel, JH Lee, SC Chae, TW Noh, YS Oh, HJ Kim, KH Kim, ..., Applied Physics Letters 89 (10), 1029072006
59. Improvement of the current-voltage characteristics of a tunneling dielectric by adopting a multilayer for flash memory application
SH Hong, JH Jang, TJ Park, DS Jeong, M Kim, CS Hwang, JY Won, Applied Physics Letters 87 (15), 152106 2005
